The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 22, 2022
Hitachi Energy Ltd, Zürich, CH;
Yulieth Arango, Zürich, CH;
Gianpaolo Romano, Baden, CH;
Andrei Mihaila, Rieden, CH;
Marco Bellini, Zürich, CH;
Lars Knoll, Hägglingen, CH;
Hitachi Energy Switzerland AG, Baden, CH;
Abstract
One embodiment provides a power semiconductor device that includes a semiconductor body. A source region of a first conductivity type is disposed at a top side the semiconductor body. A channel region of a second conductivity type is disposed in the semiconductor body below the source region and a drift region of the first conductivity type is disposed in the semiconductor body below the channel region. A trench extends from the top side through the source region and through the channel region and ending in the drift region. As seen in a top view of the top side, the trench comprises a plurality of branch-offs. A gate electrode is disposed within the trench and a shield region of the second conductivity type is located at least partially below a branch-off of the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile