The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Nov. 30, 2021
Applicant:
Hitachi Energy Ltd, Zürich, CH;
Inventors:
Assignee:
HITACHI ENERGY LTD, Zurich, CH;
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 12/00 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/109 (2025.01); H10D 12/481 (2025.01); H10D 30/668 (2025.01); H10D 62/127 (2025.01); H10D 62/8325 (2025.01);
Abstract
A power semiconductor device () comprising a semiconductor body () extending in a vertical direction between a first main surface () and a second main surface (), a trench () extending from the first main surface () into the semiconductor body () in the vertical direction, and an insulated trench gate electrode () that is formed on the first main surface () and extends into the trench () is specified, wherein the trench () is subdivided along a main extension direction of the trench () in a plurality of segments () and the insulated trench gate electrode () continuously extends over the plurality of segments ().