The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Aug. 02, 2017
Applicants:
Abb Power Grids Switzerland Ag, Baden, CH;
Audi Ag, Ingolstadt, DE;
Inventors:
Jürgen Schuderer, Zürich, CH;
Umamaheswara Vemulapati, Wettingen, CH;
Marco Bellini, Schlieren, CH;
Jan Vobecky, Lenzburg, CH;
Assignee:
ABB Power Grids Switzerland AG, Baden, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/14 (2006.01); H01L 23/62 (2006.01); H01L 25/07 (2006.01); H01L 23/373 (2006.01); H01L 23/36 (2006.01); H01L 23/535 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/147 (2013.01); H01L 23/36 (2013.01); H01L 23/3736 (2013.01); H01L 23/535 (2013.01); H01L 23/5386 (2013.01); H01L 23/62 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 29/0634 (2013.01); H01L 29/0646 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1304 (2013.01);
Abstract
A power semiconductor module including at least one power semiconductor chip providing a power electronics switch; and a semiconductor wafer, to which the at least one power semiconductor chip is bonded; wherein the semiconductor wafer is doped, such that it includes a field blocking region and an electrically conducting region on the field blocking region, to which electrically conducting region the at least one power semiconductor chip is bonded.