The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Nov. 29, 2017
Applicant:

Abb Schweiz Ag, Baden, CH;

Inventors:

Marco Bellini, Schlieren, CH;

Jan Vobecky, Lenzburg, CH;

Paul Commin, Zürich, CH;

Assignee:

ABB Schweiz AG, Baden, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/74 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/102 (2013.01); H01L 29/0692 (2013.01); H01L 29/0839 (2013.01); H01L 29/42308 (2013.01); H01L 29/74 (2013.01); H01L 29/7404 (2013.01); H01L 29/7428 (2013.01); H01L 29/7432 (2013.01);
Abstract

There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side, a contact area covered by an electrical contact of a first electrode layer with a first emitter layer and the emitter shorts includes areas in the shape of lanes, in which an area coverage of the emitter shorts is less than the area coverage of emitter shorts in the remaining area of the contact area, wherein the area coverage of the emitter shorts in a specific area is the area covered by the emitter shorts in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gate structure.


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