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For the Inventor, By the Inventor

Hsinchu, Taiwan

Lih-Ping Li

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.5

ph-index = 6

Forward Citations = 211(Granted Patents)


Company Filing History:

goldMedal15 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2003-2011

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15 patents (USPTO):Explore Patents
1. 7897505 - Method for enhancing adhesion between layers in BEOL fabrication (2011-03-01),
2. 7456093 - Method for improving a semiconductor device delamination resistance (2008-11-25),
3. 7320945 - Gradient low k material (2008-01-22),
4. 7288284 - Post-cleaning chamber seasoning method (2007-10-30),
5. 7001833 - Method for forming openings in low-k dielectric layers (2006-02-21),
6. 6962869 - SiOCH low k surface protection layer formation by CxHy gas plasma treatment (2005-11-08),
7. 6958524 - Insulating layer having graded densification (2005-10-25),
8. 6924242 - SiOC properties and its uniformity in bulk for damascene applications (2005-08-02),
9. 6884659 - Thin interface layer to improve copper etch stop (2005-04-26),
10. 6867126 - Method to increase cracking threshold for low-k materials (2005-03-15),
11. 6812043 - Method for forming a carbon doped oxide low-k insulating layer (2004-11-02),
12. 6770570 - Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer (2004-08-03),
13. 6756321 - Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant (2004-06-29),
14. 6753269 - Method for low k dielectric deposition (2004-06-22),
15. 6623654 - Thin interface layer to improve copper etch stop (2003-09-23),

Title: The Innovations of Lih-Ping Li: A Leading Inventor in Semiconductor Technology

Introduction

Lih-Ping Li, a prominent inventor based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 15 patents, he has demonstrated a strong commitment to advancing the capabilities of integrated circuits. His innovative work has helped to enhance manufacturing processes and improve device performance.

Latest Patents

Among his latest patents, Lih-Ping Li has developed a "Method for enhancing adhesion between layers in BEOL fabrication". This novel technique focuses on improving the interface adhesion between adjacent dielectric layers, especially between an etch stop layer and a low dielectric constant (k) overlying dielectric layer. The methodology involves providing an oxygen-rich dielectric pre-layer that effectively minimizes peeling and cracking during chip packaging. Additionally, he holds a patent for a "Method for improving a semiconductor device delamination resistance". This innovation enhances the durability of semiconductor devices by forming an adhesion promoting layer on the etch stop layer, resulting in improved delamination resistance.

Career Highlights

Lih-Ping Li is currently employed at Taiwan Semiconductor Manufacturing Company, Ltd., a leading global player in semiconductor fabrication. His career is marked by a dedication to producing high-quality solutions that address the complex challenges of modern electronics. Over the years, he has continually sought to innovate within the field, generating patents that protect and promote his inventive ideas.

Collaborations

Throughout his career, Lih-Ping Li has collaborated with notable colleagues, including Syun-Ming Jang and Chung-Chi Ko. Their combined expertise contributes to the development of advanced technologies and helps to drive the advancement of semiconductor manufacturing processes.

Conclusion

In conclusion, Lih-Ping Li stands out as a visionary inventor whose work in the semiconductor industry has resulted in numerous patents aimed at enhancing device performance and manufacturing efficiency. His contributions are not only vital to the companies he works with but also play an essential role in shaping the future of technology. As innovation continues to evolve, Lih-Ping Li's expertise will undoubtedly remain at the forefront of this dynamic field.

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