The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Oct. 23, 2003
Syun-ming Jang, Hsin-Chu, TW;
Chung-chi Ko, Nantou, TW;
Tien-i Bao, Hsin-chu, TW;
Lih-ping LI, Hsin-Chu, TW;
Al-sen Liu, Hsin Chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Chung-Chi Ko, Nantou, TW;
Tien-I Bao, Hsin-chu, TW;
Lih-Ping Li, Hsin-Chu, TW;
Al-Sen Liu, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a low-k dielectric material layer comprising the following steps. A first dielectric material sub-layer is formed over a substrate. The first dielectric material sub-layer is treated with an energy treatment to form a hardened layer on the upper surface of the first dielectric material sub-layer. A second dielectric material sub-layer is formed over the hardened layer, wherein the first dielectric sub-layer, the hardened layer and the second dielectric sub-layer comprise the low-k dielectric material layer. And a dual damascene structure and a dielectric material structure formed thereby.