The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Oct. 05, 2002
Chung-Chi Ko, Tainan, TW;
Yung-Cheng Lu, Taipei, TW;
Lain-Jong Li, HsinChu, TW;
Lih-Ping Li, Hsinchu, TW;
Yu-Huei Chen, Hsin-Chu, TW;
Shu-E Ku, Miaoli, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.