Taiwan Semiconductor Manufacturing Comp. Ltd.

Lih-Ping Li

Syun-Ming Jang Jang

Chung-Chi Ko

Tien-I Bao

Yung-Cheng Lu

Lain-Jong Li

Yung-Chen Lu

Hsin-Hsien Lu

Hui-Lin Chang

Tien I Bao

Bi-Trong Chen

Shu E Ku

Keng-Chu Lin

Chih-Hsien Lin

Pi-Tsung Chen

Yu-Huei Chen

Aaron Song

Al-Sen Liu

Shu-E Ku

Tien-J Bao

A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging.

Method for enhancing adhesion between layers in BEOL fabrication

A semiconductor device with improved resistance to delamination and method for forming the same the method including providing a semiconductor wafer comprising a metallization layer with an uppermost etch stop layer; forming at least one adhesion promoting layer on the etch stop layer; and, forming an inter-metal dielectric (IMD) layer on the at least one adhesion promoting layer.

Method for improving a semiconductor device delamination resistance

A thin film dielectric layer comprises a top portion and a bottom portion and has density and permittivity characteristics that vary substantially uniformly from the top portion to the bottom portion. Control over the density and/or permittivity is accomplished through varying deposition parameters such as flow rate of constituent process gases or deposition chamber pressure, or through a post deposition treatment, such as plasma treatment or curing.

Gradient low k material

A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber.

Post-cleaning chamber seasoning method

A method for etching contact/via openings in low-k dielectric layers is described. The method introduces a carbon deficient ARL which is compatible with the acidic photoresists used by DUV photolithography. The carbon deficiency of the ARL permits the use of fluorocarbon plasma etching ambients to etch the openings in the low-k layers without excessive polymer formation, thereby eliminating polymer pinch-off during the etching of deep, high aspect ratio contacts and vias in sub-tenth micron integrated circuit technology. Vertical walled contact and via openings may be formed using a DUV photoresist mask and non-oxygen containing fluorocarbon etching plasmas. An additional hardmask is therefore not needed. For non-carbon containing low-k dielectric layers the openings may be etched in simple fluorocarbon plasmas without excessive polymer formation. For low carbon low-k dielectric materials such as alky and aryl polysilsesquioxanes and some organosilicate glasses, the method provides a regimen of hydrogen addition to the etching plasma in order to sufficiently control polymer formation during the contact/via etch to obtain high quality vertical walled openings.

Method for forming openings in low-k dielectric layers

A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CHgas which is preferably ethylene. Optionally, hydrogen may be added to the CHgas. Another alternative is a two step plasma process involving a first plasma treatment of CHor CHcombined with Hand a second plasma treatment with H. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.

SiOCH low k surface protection layer formation by CxHy gas plasma treatment

A method of manufacturing an insulating layer, including forming a first dielectric layer having a first pore size over a substrate, shrinking the first pore size to a second pore size by a first densification process, forming a second dielectric layer over the first dielectric layer, and increasing an aggregate dielectric constant of the first and second dielectric layers by a second densification process.

Insulating layer having graded densification

A method of forming a low-k dielectric material layer comprising the following steps. A first dielectric material sub-layer is formed over a substrate. The first dielectric material sub-layer is treated with an energy treatment to form a hardened layer on the upper surface of the first dielectric material sub-layer. A second dielectric material sub-layer is formed over the hardened layer, wherein the first dielectric sub-layer, the hardened layer and the second dielectric sub-layer comprise the low-k dielectric material layer. And a dual damascene structure and a dielectric material structure formed thereby.

SiOC properties and its uniformity in bulk for damascene applications

In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiClH) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH) and N, followed by forming an adhesive enhanced layer over the copper layer by treatment with Nor Oor Nwith alkyl-silane or alkyl silane.

Thin interface layer to improve copper etch stop

A method of increasing the cracking threshold of a low-k material layer comprising the following steps. A substrate having a low-k material layer formed thereover is provided. The low-k material layer having a cracking threshold. The low-k material layer is plasma treated to increase the low-k material layer cracking threshold. The plasma treatment including a gas that is CO, He, NHor combinations thereof.

Method to increase cracking threshold for low-k materials

A method for forming a dielectric insulating layer with a reduced dielectric constant and increased hardness for semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing according to a CVD process a carbon doped oxide layer the CVD process including an oregano-silane precursor having Si&mdash;O groups and Si&mdash;R groups, where R is an alkyl or cyclo-alkyl group and y the number of R groups bonded to Si; and, exposing the carbon doped oxide layer to a hydrogen plasma treatment for a period of time thereby reducing the carbon doped oxide layer thickness including reducing the carbon doped oxide layer dielectric constant and increasing the carbon doped oxide layer hardness.

Method for forming a carbon doped oxide low-k insulating layer

A semiconductor device includes a low-k dielectric insulator . In the preferred embodiment, a low-k dielectric material is deposited. This material is then cured using a plasma cure step. The cure process causes the density of the top portion of layer to be increased. The higher density portion , however, also has a higher dielectric constant. As a result, the dielectric constant of the layer can be reduced by removing this higher density portion . This leads to a lower dielectric constant (e.g., less than about 3) of the bulk film.

Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer

A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.

Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant

The present disclosure provides a method for forming an intermediate trench layer through low k dielectric material deposition in a damascene process for manufacturing semiconductor devices. After depositing a low k dielectric material block, a curing process is applied to the low k dielectric material block for a predetermined curing time period, wherein after the curing time period, the low k dielectric material block forms a first and second low k dielectric layers so as to make the first low k dielectric layer an intermediate trench layer, thereby eliminating the need of an etch stop layer.

Method for low k dielectric deposition

In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl H ) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH ) and N , followed by forming an adhesive enhanced layer over the copper layer by treatment with N or O or N with alkyl-silane or alkyl silane.

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Hsinchu, Taiwan

Lih-Ping Li