The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Oct. 15, 2002
Tien-i Bao, Hsin-chu, TW;
Hsin-hsien LU, Hsin chu, TW;
Lih-ping LI, Hsinchu, TW;
Chung-chi Ko, Tainan, TW;
Aaron Song, Hsin-Chu, TW;
Syun-ming Jang, Hsin-chu, TW;
Tien-I Bao, Hsin-chu, TW;
Hsin-Hsien Lu, Hsin chu, TW;
Lih-Ping Li, Hsinchu, TW;
Chung-Chi Ko, Tainan, TW;
Aaron Song, Hsin-Chu, TW;
Syun-Ming Jang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CHgas which is preferably ethylene. Optionally, hydrogen may be added to the CHgas. Another alternative is a two step plasma process involving a first plasma treatment of CHor CHcombined with Hand a second plasma treatment with H. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.