The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
May. 08, 2003
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
The present disclosure provides a method for forming an intermediate trench layer through low k dielectric material deposition in a damascene process for manufacturing semiconductor devices. After depositing a low k dielectric material block, a curing process is applied to the low k dielectric material block for a predetermined curing time period, wherein after the curing time period, the low k dielectric material block forms a first and second low k dielectric layers so as to make the first low k dielectric layer an intermediate trench layer, thereby eliminating the need of an etch stop layer.