The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Nov. 15, 2002
Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
A semiconductor device includes a low-k dielectric insulator . In the preferred embodiment, a low-k dielectric material is deposited. This material is then cured using a plasma cure step. The cure process causes the density of the top portion of layer to be increased. The higher density portion , however, also has a higher dielectric constant. As a result, the dielectric constant of the layer can be reduced by removing this higher density portion . This leads to a lower dielectric constant (e.g., less than about 3) of the bulk film.