The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Jul. 03, 2004
Pi-tsung Chen, Tainan, TW;
Keng-chu Lin, Ping-Tung, TW;
Hui-lin Chang, Hsin-Chu, TW;
Lih-ping LI, Hsin-Chu, TW;
Tien-i Bao, Hsin-Chu, TW;
Yung-cheng LU, Taipei, TW;
Syun-ming Jang, Hsin-Chu, TW;
Pi-Tsung Chen, Tainan, TW;
Keng-Chu Lin, Ping-Tung, TW;
Hui-Lin Chang, Hsin-Chu, TW;
Lih-Ping Li, Hsin-Chu, TW;
Tien-I Bao, Hsin-Chu, TW;
Yung-Cheng Lu, Taipei, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device with improved resistance to delamination and method for forming the same the method including providing a semiconductor wafer comprising a metallization layer with an uppermost etch stop layer; forming at least one adhesion promoting layer on the etch stop layer; and, forming an inter-metal dielectric (IMD) layer on the at least one adhesion promoting layer.