Hsinchu, Taiwan

Li-Wei Cheng

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Wei Cheng. Retrieved from https://idiyas.com/inventor/li-wei-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 95.0

Average Co-Inventor Count = 4.4

ph-index = 9

Forward Citations = 199(Granted Patents)


Company Filing History:


Years Active: 2005-2014

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Areas of Expertise:
Semiconductor Device
CMOS Device
Metal Gate Transistor
Gate Structure
Fabrication Method
Polysilicon Resistor
Gate Electrode
Y Shape Metal Gate
Gate Dielectric Layer
Fully Silicided Gate
Element Structure
Polysilicon Germanium Layer
20 patents (USPTO):Explore Patents

Title: Inventor Li-Wei Cheng: Revolutionizing Technology in Hsin-Chu

Introduction: Li-Wei Cheng is a pioneering inventor based in Hsin-Chu, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Li-Wei Cheng holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing her versatility and innovative spirit.

Career Highlights: With a career spanning over two decades, Li-Wei Cheng has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the tech industry.

Collaborations: Throughout her career, Li-Wei Cheng has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge-sharing in the tech community.

Conclusion: Li-Wei Cheng's dedication to innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology in Hsin-Chu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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