The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Feb. 19, 2008
Tian-fu Chiang, Taipei, TW;
Li-wei Cheng, Hsin-Chu, TW;
Che-hua Hsu, Hsin-Chu Hsien, TW;
Chih-hao Yu, Tainan County, TW;
Cheng-hsien Chou, Tainan, TW;
Chien-ming Lai, Tainan County, TW;
Yi-wen Chen, Tainan County, TW;
Chien-ting Lin, Hsin-Chu, TW;
Guang-hwa MA, Hsinchu, TW;
Tian-Fu Chiang, Taipei, TW;
Li-Wei Cheng, Hsin-Chu, TW;
Che-Hua Hsu, Hsin-Chu Hsien, TW;
Chih-Hao Yu, Tainan County, TW;
Cheng-Hsien Chou, Tainan, TW;
Chien-Ming Lai, Tainan County, TW;
Yi-Wen Chen, Tainan County, TW;
Chien-Ting Lin, Hsin-Chu, TW;
Guang-Hwa Ma, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor element structure includes a first MOS having a first high-K material and a first metal for use in a first gate, a second MOS having a second high-K material and a second metal for use in a second gate and a bridge channel disposed in a recess connecting the first gate and the second gate for electrically connecting the first gate and the second gate, wherein the bridge channel is embedded in at least one of the first gate and the second gate.