The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Aug. 25, 2008
Applicants:
Chien-ting Lin, Hsin-Chu, TW;
Li-wei Cheng, Hsin-Chu, TW;
Che-hua Hsu, Hsin-Chu Hsien, TW;
Yao-tsung Huang, Kaohsiung County, TW;
Guang-hwa MA, Hsinchu, TW;
Inventors:
Chien-Ting Lin, Hsin-Chu, TW;
Li-Wei Cheng, Hsin-Chu, TW;
Che-Hua Hsu, Hsin-Chu Hsien, TW;
Yao-Tsung Huang, Kaohsiung County, TW;
Guang-Hwa Ma, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a first gate structure including a gate dielectric layer directly contacting the substrate, a bottom electrode on the gate dielectric layer and a top electrode on the bottom electrode, and a second gate structure including a gate dielectric layer directly contacting the substrate and a gate electrode on the gate dielectric layer.