The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Aug. 25, 2010
Tian-fu Chiang, Taipei, TW;
Li-wei Cheng, Hsin-Chu, TW;
Che-hua Hsu, Hsin-Chu Hsien, TW;
Chih-hao Yu, Tainan County, TW;
Cheng-hsien Chou, Tainan County, TW;
Chien-ming Lai, Tainan County, TW;
Yi-wen Chen, Tainan County, TW;
Chien-ting Lin, Hsin-Chu, TW;
Guang-hwa MA, Hsinchu, TW;
Tian-Fu Chiang, Taipei, TW;
Li-Wei Cheng, Hsin-Chu, TW;
Che-Hua Hsu, Hsin-Chu Hsien, TW;
Chih-Hao Yu, Tainan County, TW;
Cheng-Hsien Chou, Tainan County, TW;
Chien-Ming Lai, Tainan County, TW;
Yi-Wen Chen, Tainan County, TW;
Chien-Ting Lin, Hsin-Chu, TW;
Guang-Hwa Ma, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the gate electrode of the second MOS, wherein the first MOS includes a first high-K material and a first metal for use in a first gate, and a second MOS includes a second high-K material and a second metal for use in a second gate. Then the first gate and the second gate are partially removed to form a connecting recess. Afterwards, the connecting recess is filled with a conductive material to form a bridge channel for electrically connecting the first metal and the second metal.