The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Oct. 19, 2010
Chih-hao Yu, Tainan County, TW;
Li-wei Cheng, Hsinchu, TW;
Che-hua Hsu, Hsinchu County, TW;
Tian-fu Chiang, Taipei, TW;
Cheng-hsien Chou, Tainan, TW;
Chien-ming Lai, Tainan County, TW;
Yi-wen Chen, Tainan County, TW;
Chien-ting Lin, Hsinchu, TW;
Guang-hwa MA, Hsinchu, TW;
Chih-Hao Yu, Tainan County, TW;
Li-Wei Cheng, Hsinchu, TW;
Che-Hua Hsu, Hsinchu County, TW;
Tian-Fu Chiang, Taipei, TW;
Cheng-Hsien Chou, Tainan, TW;
Chien-Ming Lai, Tainan County, TW;
Yi-Wen Chen, Tainan County, TW;
Chien-Ting Lin, Hsinchu, TW;
Guang-Hwa Ma, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.