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For the Inventor, By the Inventor

Hsinchu, Taiwan

Kuei-Shun Chen

This inventor holds 67 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuei-Shun Chen. Retrieved from https://idiyas.com/inventor/kuei-shun-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 67 

% Patents Active = 74.6

Average Co-Inventor Count = 6.1

ph-index = 8

Forward Citations = 253(Granted Patents)

Forward Citations (Not Self Cited) = 220(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • New Taipei, TW (2018)
  • Hsinchu County, TW (2020)
  • Hsin-Chu, TW (2005 - 2024)

Company Filing History:

goldMedal66 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 465 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2005-2026

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Areas of Expertise:
Pattern Fidelity
Trench Distortion
Integrated Circuit
Field Effect Transistor
Mandrel Structure
Spacer Patterning
Dummy Gate Structure
Overlay Grating
Semiconductor Metrology
Directional Patterning
Gap Filling Improvement
Lithography Process
67 patents (USPTO):Explore Patents
1. 12690265 - Field effect transistor with isolation structure and related method (2026-07-21),
2. 12412016 - Method and structure for mandrel and spacer patterning (2025-09-09),
3. 12394633 - Method of fabricating semiconductor device with reduced trench distortions (2025-08-19),
4. 12334342 - Pattern fidelity enhancement (2025-06-17),
5. 12154975 - Method of manufacturing a semiconductor device and semiconductor device (2024-11-26),
6. 11940737 - Method of fabricating reticle (2024-03-26),
7. 11894238 - Method of fabricating semiconductor device with reduced trench distortions (2024-02-06),
8. 11791161 - Pattern fidelity enhancement (2023-10-17),
9. 11748540 - Method and structure for mandrel and spacer patterning (2023-09-05),
10. 11392745 - Method for improving circuit layout for manufacturability (2022-07-19),
11. 11387113 - Method of fabricating semiconductor device with reduced trench distortions (2022-07-12),
12. 11211323 - Method of fabricating field effect transistor having non-orthogonal gate electrode (2021-12-28),
13. 11158509 - Pattern fidelity enhancement with directional patterning technology (2021-10-26),
14. 11094802 - Method of manufacturing a semiconductor device and semiconductor device (2021-08-17),
15. 11010526 - Method and structure for mandrel and spacer patterning (2021-05-18),

Title: The Innovative Journey of Inventor Kuei-Shun Chen

Introduction: Kuei-Shun Chen, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Kuei-Shun Chen's latest patents include a cutting-edge smart home device that revolutionizes the way we interact with our living spaces, and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Kuei-Shun Chen has worked for several leading tech companies, where he honed his skills in research and development. His expertise in product design and engineering has led to the successful launch of multiple products in the market.

Collaborations: Throughout his career, Kuei-Shun Chen has collaborated with top researchers, engineers, and designers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Kuei-Shun Chen's passion for innovation and his dedication to pushing the boundaries of technology have established him as a respected figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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