The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

May. 19, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yu-Tien Shen, Hsinchu, TW;

Chi-Cheng Hung, Miaoli County, TW;

Chin-Hsiang Lin, Hsin-chu, TW;

Chien-Wei Wang, Zhubei, TW;

Ching-Yu Chang, Yilang County, TW;

Chih-Yuan Ting, Taipei, TW;

Kuei-Shun Chen, Hsinchu, TW;

Ru-Gun Liu, Hsinchu County, TW;

Wei-Liang Lin, Hsin-Chu, TW;

Ya Hui Chang, Hsinchu, TW;

Yuan-Hsiang Lung, Hsinchu, TW;

Yen-Ming Chen, Chu-Pei, TW;

Yung-Sung Yen, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method for semiconductor manufacturing includes providing a substrate, forming a patterning layer over the substrate, and patterning the patterning layer to form a hole in the patterning layer. The method also includes applying a first directional etching to two inner sidewalls of the hole to expand the hole along a first direction and applying a second directional etching to another two inner sidewalls of the hole to expand the hole along a second direction that is different from the first direction.


Find Patent Forward Citations

Loading…