The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Apr. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chung-Ming Wang, Chiayi, TW;
Chih-Hsiung Peng, Miaoli County, TW;
Chi-Kang Chang, New Taipei, TW;
Kuei-Shun Chen, Hsinchu, TW;
Shih-Chi Fu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes generating at least one photomask based on a layout and forming a plurality of active patterns on a substrate, using the at least one photomask. The layout includes a plurality of first patterns that extend parallel to each other in a first direction on a low-density region of the layout and a plurality of second patterns that extend parallel to each other in the first direction on a high-density region of the layout. The forming of the plurality of active patterns includes using the first patterns and the second patterns of the layout to respectively form a plurality of first active patterns and a plurality of second active patterns on the substrate.