The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Dec. 07, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Tien Shen, Tainan, TW;
Ya-Wen Yeh, Taipei, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Ya Hui Chang, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Wei-Hao Wu, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Kuei-Shun Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes providing a substrate and a patterning layer over the substrate and forming a plurality of openings in the patterning layer. The substrate includes a plurality of features to receive a treatment process. The openings partially overlap with the features from a top view while a portion of the features remains covered by the patterning layer. Each of the openings is free of concave corners. The method further includes performing an opening expanding process to enlarge each of the openings and performing a treatment process to the features through the openings. After the opening expanding process, the openings fully overlap with the features from the top view.