The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jul. 30, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Tien Shen, Tainan, TW;
Ya-Wen Yeh, Taipei, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Ya Hui Chang, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Wei-Hao Wu, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Kuei-Shun Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes forming a hard mask layer over a substrate, the substrate having one or more regions to receive a treatment process, forming a resist layer over the hard mask layer, patterning the resist layer to form a plurality of openings in the resist layer, each of the openings free of concave corners, performing an opening expanding process to enlarge at least one of the openings in the resist layer, transferring the openings in the resist layer to the hard mask layer, and performing the treatment process to the one or more regions in the substrate through the openings in the hard mask layer.