Hung-Chang Hsieh

This inventor holds 62 USPTO granted patents, primarily in Semiconductor Fabrication (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Chang Hsieh. Retrieved from https://idiyas.com/inventor/hung-chang-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 62

% Patents Active = 59.7

Average Co-Inventor Count = 3.7

ph-index = 14

Forward Citations = 587(Granted Patents)

Forward Citations (Not Self Cited) = 560(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Shin-Tsu, TW (2001)
Hsin-Chu, TW (1999 - 2023)

Company Filing History:

62 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 1999-2023

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Areas of Expertise:

Semiconductor

Integrated Circuit

FinFET

Lithography

Photoresist

Wafer Defects

Alignment Marks

Patterning

Spin Coating

Surface Modification

Chip Extension

High Topology

62 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11735477 - Method of semiconductor integrated circuit fabrication (2023-08-22),

2. 11378894 - Lithography system with an embedded cleaning module (2022-07-05),

3. 11081394 - Method of making a FinFET device (2021-08-03),

4. 10672656 - Method of semiconductor integrated circuit fabrication (2020-06-02),

5. 10522413 - Method of forming source/drain contact (2019-12-31),

6. 10459353 - Lithography system with an embedded cleaning module (2019-10-29),

7. 10163720 - Method of forming source/drain contact (2018-12-25),

8. 10101659 - Lithography method with surface modification layer (2018-10-16),

9. 10096519 - Method of making a FinFET device (2018-10-09),

10. 9996011 - System and method for lithography alignment (2018-06-12),

11. 9929153 - Method of making a FinFET device (2018-03-27),

12. 9905471 - Integrated circuit structure and method forming trenches with different depths (2018-02-27),

13. 9875892 - Method of forming a photoresist layer (2018-01-23),

14. 9823574 - Lithography alignment marks (2017-11-21),

15. 9805154 - Method of lithography process with inserting scattering bars (2017-10-31),

Title: The Innovative Journey of Inventor Hung-Chang Hsieh

Introduction:

Hung-Chang Hsieh, a distinguished inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Hung-Chang Hsieh's latest patents showcase his commitment to pushing the boundaries of technological advancement, with a focus on areas such as semiconductor devices and renewable energy solutions.

Career Highlights:

Throughout his illustrious career, Hung-Chang Hsieh has been recognized for his pioneering work in developing cutting-edge technologies that have revolutionized industries. His innovative spirit and dedication to excellence have earned him a reputation as a trailblazer in the field of invention.

Collaborations:

Hung-Chang Hsieh has collaborated with leading research institutions, universities, and companies around the world to further his research and bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion:

Inventor Hung-Chang Hsieh's passion for innovation, coupled with his technical expertise, has cemented his legacy as a visionary inventor. His relentless pursuit of excellence continues to inspire the next generation of inventors to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]