The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Nov. 18, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Shu-Fang Chen, Hsinchu County, TW;
Hung-Chung Chien, Chiayi County, TW;
Lin-Hung Shiu, Hsinchu, TW;
Hung-Chang Hsieh, Hsin-Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
G03F 7/091 (2013.01); H01L 21/0226 (2013.01); H01L 21/0271 (2013.01); H01L 21/0276 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02343 (2013.01); H01L 21/266 (2013.01); H01L 21/02266 (2013.01); H01L 21/02282 (2013.01);
Abstract
A lithography method is provided in accordance with some embodiments. The lithography method includes forming a surface modification layer on a substrate, the surface modification layer including a hydrophilic top surface; coating a photoresist layer on the surface modification layer; and developing the photoresist layer, thereby forming a patterned photoresist layer.