The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
May. 15, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Irene Ho, Taichung, TW;
Ai-Jen Hung, Nantou County, TW;
Hung-Chang Hsieh, Hsin-Chu, TW;
Kuei-Liang Lu, Hsinchu, TW;
Ya Hui Chang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/00 (2012.01); G03F 7/00 (2006.01); G03F 1/36 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G03F 1/144 (2013.01); G03F 1/36 (2013.01); G03F 7/70441 (2013.01); G03F 7/70433 (2013.01); G06F 17/5081 (2013.01);
Abstract
The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars.