The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

May. 08, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chun-Wei Chang, Tainan, TW;

Chih-Chien Wang, Changhua, TW;

Wang-Pen Mo, Pingtung, TW;

Hung-Chang Hsieh, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/12 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/67 (2006.01); B05D 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02282 (2013.01); H01L 21/0276 (2013.01); H01L 21/6715 (2013.01); B05D 1/005 (2013.01);
Abstract

A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.


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