The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Oct. 26, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Chung-Ju Lee, Hsinchu, TW;
Chun-Kuang Chen, Hsinchu County, TW;
Chia-Tien Wu, Taichung, TW;
Ta-Ching Yu, Hsinchu County, TW;
Kuei-Shun Chen, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Shau-Lin Shue, Hsinchu, TW;
Tsai-Sheng Gau, HsinChu, TW;
Yung-Hsu Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.