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For the Inventor, By the Inventor

Crolles, France

Konstantin Bourdelle

This inventor holds 21 USPTO granted patents and 2 published patent applications and 6 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: S.o.i.tec Silicon on Insulator Technologies, Soitec, Asm International N.v.. Active years: 2007-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Konstantin Bourdelle. Retrieved from https://idiyas.com/inventor/konstantin-bourdelle

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 90.5

 

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 91(Granted Patents)


Location History:

  • Crolle, FR (2009 - 2010)
  • Crolles, FR (2007 - 2017)

Company Filing History:

goldMedal12 out of 214 
 
S.o.i.tec Silicon on Insulator Technologies
 patents
silverMedal7 out of 537 
 
Soitec
 patents
bronzeMedal1 out of 313 
 
Asm International N.v.
 patents
4. 1 out of 8,836 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
5. 1 out of 86 
 
S.o.i. Tec Silicon on Insulator Technologies, S.a.
 patents
where one patent can have more than one assignee

Years Active: 2007-2017

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Areas of Expertise:
Semiconductor
Layer Transfer
Substrate Fabrication
Heterostructures
Image Sensors
Thermal Annealing
Trench Structures
Interface Defects
Atomic Implantation
Wafer Manufacturing
Germanium
Semiconductor-on-Insulator
21 patents (USPTO):Explore Patents
1. 9698063 - Method of testing a semiconductor-on-insulator structure and application of said test to the fabrication of such a structure (2017-07-04),
2. 9275892 - Method of high temperature layer transfer (2016-03-01),
3. 9035474 - Method for manufacturing a semiconductor substrate (2015-05-19),
4. 9018678 - Method for forming a Ge on III/V-on-insulator structure (2015-04-28),
5. 8309431 - Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation (2012-11-13),
6. 8309426 - Methods for manufacturing multilayer wafers with trench structures (2012-11-13),
7. 8263475 - Method for manufacturing heterostructures (2012-09-11),
8. 8241942 - Method of fabricating a back-illuminated image sensor (2012-08-14),
9. 8058158 - Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same (2011-11-15),
10. 7871900 - Quality of a thin layer through high-temperature thermal annealing (2011-01-18),
11. 7833877 - Method for producing a semiconductor substrate (2010-11-16),
12. 7799651 - Method of treating interface defects in a substrate (2010-09-21),
13. 7767545 - Substrate production method and substrate including amorphization and recrystallizing a top region (2010-08-03),
14. 7670929 - Method for direct bonding two semiconductor substrates (2010-03-02),
15. 7645486 - Method of manufacturing a silicon dioxide layer (2010-01-12),

Title: Konstantin Bourdelle - Innovative Inventor from Crolles, FR

Introduction: Konstantin Bourdelle is a renowned inventor hailing from Crolles, France, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Konstantin Bourdelle's latest patents include a revolutionary design for a solar-powered water purification system and a cutting-edge algorithm for optimizing energy consumption in smart homes.

Career Highlights: With over 20 years of experience in the tech industry, Bourdelle has worked for leading companies such as Tech Innovations Ltd. and FutureTech Solutions, where he spearheaded projects that have significantly impacted the way we interact with technology on a daily basis.

Collaborations: Bourdelle has collaborated with top researchers from prestigious institutions like the National Institute for Research in Computer Science and Automation (INRIA) and the French National Centre for Scientific Research (CNRS) to push the boundaries of technological advancement.

Conclusion: Konstantin Bourdelle's relentless passion for innovation and his commitment to pushing the limits of technology make him a true pioneer in the field of inventions. His work continues to inspire the next generation of inventors and tech enthusiasts worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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