The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Nov. 23, 2011
Nicolas Daix, Grenoble, FR;
Konstantin Bourdelle, Crolles, FR;
Nicolas Daix, Grenoble, FR;
Konstantin Bourdelle, Crolles, FR;
SOITEC, Bernin, FR;
Abstract
A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.