The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Oct. 16, 2007
Konstantin Bourdelle, Crolles, FR;
Nguyet-phuong Nguyen, Grenoble, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Konstantin Bourdelle, Crolles, FR;
Nguyet-Phuong Nguyen, Grenoble, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method for forming a structure is provided and includes implanting an atomic species into a donor substrate having an upper surface at a given depth relative to the upper surface to form an embrittlement zone in the donor substrate, the embrittlement zone defining a removable layer within the donor substrate. The method further includes assembling the upper surface of the donor substrate to a receiver substrate. Additionally, the method includes detaching the removable layer from the donor substrate at the embrittlement zone, thereby forming a detachment surface on the removable layer, by high temperature annealing. The high temperature annealing includes a temperature upgrade phase to a predetermined maximum temperature, maintaining the maximum temperature for a predetermined exposure duration, and a temperature downgrade phase. The maximum temperature and the exposure duration are selected so as to prevent the appearance of significant defects at the detachment surface.