The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Apr. 25, 2011
Konstantin Bourdelle, Crolles, FR;
Carlos Mazure, Bernin, FR;
Konstantin Bourdelle, Crolles, FR;
Carlos Mazure, Bernin, FR;
Soitec, Bernin, FR;
Abstract
The present invention provides methods for the manufacture of a trench structure in a multilayer wafer that comprises a substrate, an oxide layer on the substrate and a semiconductor layer on the oxide layer. These methods include the steps of forming a trench through the semiconductor layer and the oxide layer and extending into the substrate, and of performing an anneal treatment of the formed trench such that at the inner surface of the trench some material of the semiconductor layer flows at least over a portion of the part of the oxide layer exposed at the inner surface of the trench. Substrates manufactured according to this invention are advantageous for fabricating various semiconductor devices, e.g., MOSFETs, trench capacitors, and the like.