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For the Inventor, By the Inventor

Bernin, France

Carlos Mazure

USPTO Granted Patents = 48 

 

Average Co-Inventor Count = 2.7

ph-index = 9

Forward Citations = 291(Granted Patents)


Location History:

  • Saint-Nazaire les Eymes, FR (2005)
  • St. Nazire les Eymes, FR (2006)
  • Bernjn, FR (2010)
  • St. Nazaire les Eymes, FR (2006 - 2012)
  • Bernin, FR (2008 - 2016)

Company Filing History:

goldMedal27 out of 507 
 
Soitec
 patents
silverMedal16 out of 214 
 
S.o.i.tec Silicon on Insulator Technologies
 patents
bronzeMedal5 out of 86 
 
S.o.i. Tec Silicon on Insulator Technologies, S.a.
 patents
4. 2 out of 11 
 
Commissariat À L'energie Atomique (Cea)
 patents
5. 1 out of 312 
 
Asm America, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2005-2016

where 'Filed Patents' based on already Granted Patents

48 patents (USPTO):
1. 9496877 - Pseudo-inverter circuit with multiple independent gate transistors (2016-11-15),
2. 9490264 - Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device (2016-11-08),
3. 9159400 - Semiconductor memory having staggered sense amplifiers associated with a local column decoder (2015-10-13),
4. 9035474 - Method for manufacturing a semiconductor substrate (2015-05-19),
5. 8987114 - Bonded semiconductor structures and method of forming same (2015-03-24),
6. 8735946 - Substrate having a charged zone in an insulating buried layer (2014-05-27),
7. 8664712 - Flash memory cell on SeOI having a second control gate buried under the insulating layer (2014-03-04),
8. 8654602 - Pseudo-inverter circuit on SeOI (2014-02-18),
9. 8652887 - Multi-layer structures and process for fabricating semiconductor devices (2014-02-18),
10. 8625374 - Nano-sense amplifier (2014-01-07),
11. 8603896 - Method for transferring a monocrystalline semiconductor layer onto a support substrate (2013-12-10),
12. 8575697 - SRAM-type memory cell (2013-11-05),
13. 8535996 - Substrate having a charged zone in an insulating buried layer (2013-09-17),
14. 8508289 - Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer (2013-08-13),
15. 8492844 - Fully depleted SOI device with buried doped layer (2013-07-23),

Title: Innovations and Contributions of Carlos Mazure

Introduction

Carlos Mazure, based in Bernin, France, is a notable inventor recognized for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 48 patents, his work focuses on innovations that enhance the efficiency and functionality of electronic devices.

Latest Patents

Among his latest innovations, Mazure has developed a "Pseudo-inverter circuit with multiple independent gate transistors". This invention introduces a novel circuit configuration, featuring transistors with independent control gates that enable advanced operational modes, including a depletion mode. Furthermore, he has patented a "Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device." This invention incorporates a semiconductor-on-insulator substrate to improve the capabilities of semiconductor devices, highlighting his commitment to pushing the boundaries of technology.

Career Highlights

Mazure has held influential positions in prominent companies, notably Soitec and S.O.I.tec Silicon on Insulator Technologies. His roles at these companies allowed him to develop groundbreaking technologies and contribute to the growing field of semiconductor innovation.

Collaborations

Throughout his career, Carlos has collaborated with distinguished professionals such as Richard Ferrant and Bich-Yen Nguyen. Together, they have worked on various projects that leverage their collective expertise, leading to advancements in semiconductor research and development.

Conclusion

Carlos Mazure's innovative spirit and expertise in semiconductor technology have made significant impacts in the industry. With a robust collection of patents and a history of collaboration, he continues to lead the charge in developing cutting-edge technologies that pave the way for future advancements.

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