The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Feb. 22, 2011
Applicants:

Carlos Mazure, Bernin, FR;

Bich-yen Nguyen, Austin, TX (US);

Mariam Sadaka, Austin, TX (US);

Inventors:

Carlos Mazure, Bernin, FR;

Bich-Yen Nguyen, Austin, TX (US);

Mariam Sadaka, Austin, TX (US);

Assignee:

SOITEC, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/06 (2006.01); H01L 21/18 (2006.01); H01L 21/822 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/187 (2013.01); H01L 21/8221 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02667 (2013.01);
Abstract

Methods of forming semiconductor structures include transferring a portion () of a donor structure to a processed semiconductor structure () that includes at least one non-planar surface. An amorphous film () may be formed over at least one non-planar surface of the bonded semiconductor structure, and the amorphous film may be planarized to form one or more planarized surfaces. Semiconductor structures include a bonded semiconductor structure having at least one non-planar surface, and an amorphous film disposed over the at least one non-planar surface. The bonded semiconductor structure may include a processed semiconductor structure and a portion of a single crystal donor structure attached to a non-planar surface of the processed semiconductor structure.


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