The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Feb. 22, 2007
Konstantin Bourdelle, Crolles, FR;
Nicolas Daval, Grenoble, FR;
Ian Cayrefourcq, Saint Nazaire les Eymes, FR;
Steven R. A. Van Aerde, Tielt-Winge, BE;
Marinus J. M. DE Blank, Heverlee, BE;
Cornelius A. Van Der Jeugd, Heverlee, BE;
Konstantin Bourdelle, Crolles, FR;
Nicolas Daval, Grenoble, FR;
Ian Cayrefourcq, Saint Nazaire les Eymes, FR;
Steven R. A. Van Aerde, Tielt-Winge, BE;
Marinus J. M. De Blank, Heverlee, BE;
Cornelius A. Van Der Jeugd, Heverlee, BE;
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
ASM International N.V., Bilthoven, NL;
Abstract
The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600° C. and 1200° C., for a duration between 10 minutes and 6 hours.