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For the Inventor, By the Inventor

Grenoble, France

Nicolas Daval

USPTO Granted Patents = 25 

 

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 96(Granted Patents)


Location History:

  • Grenoble, FR (2006 - 2012)
  • Pleasantville, NY (US) (2013 - 2015)
  • Lumbin, FR (2015 - 2017)
  • Goncelin, FR (2020 - 2024)

Company Filing History:

goldMedal11 out of 214 
 
S.o.i.tec Silicon on Insulator Technologies
 patents
silverMedal11 out of 507 
 
Soitec
 patents
bronzeMedal2 out of 86 
 
S.o.i. Tec Silicon on Insulator Technologies, S.a.
 patents
4. 1 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
5. 1 out of 313 
 
Asm International N.v.
 patents
6. 1 out of 164,197 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2006-2025

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25 patents (USPTO):Explore Patents
1. 12261079 - Method for fabricating a strained semiconductor-on-insulator substrate (2025-03-25),
2. 12100727 - Method for manufacturing a substrate for a front-facing image sensor (2024-09-24),
3. 11876020 - Method for manufacturing a CFET device (2024-01-16),
4. 11728207 - Method for fabricating a strained semiconductor-on-insulator substrate (2023-08-15),
5. 10957577 - Method for fabricating a strained semiconductor-on-insulator substrate (2021-03-23),
6. 10672646 - Method for fabricating a strained semiconductor-on-insulator substrate (2020-06-02),
7. 9768057 - Method for transferring a layer from a single-crystal substrate (2017-09-19),
8. 9177961 - Wafer with intrinsic semiconductor layer (2015-11-03),
9. 9018678 - Method for forming a Ge on III/V-on-insulator structure (2015-04-28),
10. 8753528 - Etchant for controlled etching of Ge and Ge-rich silicon germanium alloys (2014-06-17),
11. 8367521 - Manufacture of thin silicon-on-insulator (SOI) structures (2013-02-05),
12. 8183128 - Method of reducing roughness of a thick insulating layer (2012-05-22),
13. 7645486 - Method of manufacturing a silicon dioxide layer (2010-01-12),
14. 7531427 - Thermal oxidation of a SiGe layer and applications thereof (2009-05-12),
15. 7459374 - Method of manufacturing a semiconductor heterostructure (2008-12-02),

Title: Inventor Nicolas Daval - Revolutionizing Technology in Grenoble

Introduction: Nicolas Daval is a visionary inventor based in Grenoble, France, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nicolas Daval holds several patents in the areas of renewable energy, sustainable materials, and artificial intelligence, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a background in engineering and a passion for cutting-edge technology, Daval has led numerous research projects that have resulted in innovative solutions for complex challenges in various industries.

Collaborations: Throughout his career, Nicolas Daval has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and turn them into tangible products that have a positive impact on society.

Conclusion: Nicolas Daval's relentless pursuit of innovation and his dedication to pushing the boundaries of technology make him a key figure in the world of inventors, shaping the future of technology in Grenoble and beyond.

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