Nicolas Daval

This inventor holds 25 USPTO granted patents and 2 published patent applications and 12 EPO patents, primarily in Semiconductor Fabrication. Top assignees: S.o.i.tec Silicon on Insulator Technologies, Soitec, S.o.i. Tec Silicon on Insulator Technologies, S.a.. Active years: 2006-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nicolas Daval. Retrieved from https://idiyas.com/inventor/nicolas-daval

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 25 (Patent Applications = 2)

% Patents Active = 88.0

EPO Patents = 12 (Patent Applications = 5)

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 97(Granted Patents)

Location History:

Grenoble, FR (2006 - 2012)
Pleasantville, NY (US) (2013 - 2015)
Lumbin, FR (2015 - 2017)
Goncelin, FR (2020 - 2024)

Company Filing History:

11 out of 214

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

patents

4. 1 out of 313

Asm International N.v.

patents

5. 1 out of 8,836

Commissariat a L'energie Atomique Et Aux Energies Alternatives

patents

6. 1 out of 166,425

International Business Machines Corporation

patents

where one patent can have more than one assignee

Years Active: 2006-2025

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Areas of Expertise:

Semiconductor-on-Insulator

Front-Facing Image Sensor

CFET Device

Intrinsic Semiconductor Layer

Ge on III/V Structure

Silicon-Germanium Alloys

Thin SOI Structures

Thermal Treatment

Heterostructure Manufacturing

Atomic Implantation

Roughness Reduction

Schottky Power Diode

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12261079 - Method for fabricating a strained semiconductor-on-insulator substrate (2025-03-25),

2. 12100727 - Method for manufacturing a substrate for a front-facing image sensor (2024-09-24),

3. 11876020 - Method for manufacturing a CFET device (2024-01-16),

4. 11728207 - Method for fabricating a strained semiconductor-on-insulator substrate (2023-08-15),

5. 10957577 - Method for fabricating a strained semiconductor-on-insulator substrate (2021-03-23),

6. 10672646 - Method for fabricating a strained semiconductor-on-insulator substrate (2020-06-02),

7. 9768057 - Method for transferring a layer from a single-crystal substrate (2017-09-19),

8. 9177961 - Wafer with intrinsic semiconductor layer (2015-11-03),

9. 9018678 - Method for forming a Ge on III/V-on-insulator structure (2015-04-28),

10. 8753528 - Etchant for controlled etching of Ge and Ge-rich silicon germanium alloys (2014-06-17),

11. 8367521 - Manufacture of thin silicon-on-insulator (SOI) structures (2013-02-05),

12. 8183128 - Method of reducing roughness of a thick insulating layer (2012-05-22),

13. 7645486 - Method of manufacturing a silicon dioxide layer (2010-01-12),

14. 7531427 - Thermal oxidation of a SiGe layer and applications thereof (2009-05-12),

15. 7459374 - Method of manufacturing a semiconductor heterostructure (2008-12-02),

Title: Inventor Nicolas Daval - Revolutionizing Technology in Grenoble

Introduction: Nicolas Daval is a visionary inventor based in Grenoble, France, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nicolas Daval holds several patents in the areas of renewable energy, sustainable materials, and artificial intelligence, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a background in engineering and a passion for cutting-edge technology, Daval has led numerous research projects that have resulted in innovative solutions for complex challenges in various industries.

Collaborations: Throughout his career, Nicolas Daval has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and turn them into tangible products that have a positive impact on society.

Conclusion: Nicolas Daval's relentless pursuit of innovation and his dedication to pushing the boundaries of technology make him a key figure in the world of inventors, shaping the future of technology in Grenoble and beyond.

Profile summary based on public USPTO records.