The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Feb. 04, 2013
Applicants:

International Business Machines Corporation, Armonk, NY (US);

S.o.i.tec Silicon on Insulator Technologies, Bernin, FR;

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Nicolas Daval, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.


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