The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Dec. 23, 2019
Applicant:

Soitec, Bernin, FR;

Inventors:

Walter Schwarzenbach, Saint Nazaire les Eymes, FR;

Ludovic Ecarnot, Grenoble, FR;

Damien Massy, Grenoble, FR;

Nadia Ben Mohamed, Echirolles, FR;

Nicolas Daval, Goncelin, FR;

Christophe Girard, Theys, FR;

Christophe Maleville, Lumbin, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 21/762 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14683 (2013.01); H01L 21/26506 (2013.01); H01L 21/3223 (2013.01); H01L 21/3226 (2013.01); H01L 21/76254 (2013.01); H01L 27/1463 (2013.01); H01L 31/1892 (2013.01);
Abstract

A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.


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