logo

For the Inventor, By the Inventor

St. Nazaire les Eymes, France

Ian Cayrefourcq

This inventor holds 15 USPTO granted patents and 1 published patent application and 8 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: S.o.i.tec Silicon on Insulator Technologies, Commissariat a L'energie Atomique Et Aux Energies Alternatives, S.o.i. Tec Silicon on Insulator Technologies, S.a.. Active years: 2005-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ian Cayrefourcq. Retrieved from https://idiyas.com/inventor/ian-cayrefourcq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 93.3

 

Average Co-Inventor Count = 2.8

ph-index = 5

Forward Citations = 79(Granted Patents)


Location History:

  • 38330 Saint Nazaire les Eymes, FR (2007)
  • St. Nazire les Eymes, FR (2006 - 2009)
  • St. Nazaire les Eymes, FR (2005 - 2012)
  • Saint Nazaire les Eymes, FR (2010 - 2012)

Company Filing History:

goldMedal10 out of 214 
 
S.o.i.tec Silicon on Insulator Technologies
 patents
silverMedal2 out of 8,851 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
bronzeMedal2 out of 86 
 
S.o.i. Tec Silicon on Insulator Technologies, S.a.
 patents
4. 1 out of 313 
 
Asm International N.v.
 patents
5. 1 out of 540 
 
Soitec
 patents
6. 1 out of 834,708 
Other
 patents
where one patent can have more than one assignee

Years Active: 2005-2012

Loading Chart...
Loading Chart...
Areas of Expertise:
Thin Film Transfer
Wafer Production
Photodetecting Device
SOI Structure
Interface Defects
Silicon Dioxide Layer
Hetero-Structure
Pulsation Method
Bonding Layer
Substrate Treatment
Crystalline Structure
15 patents (USPTO):Explore Patents
1. 8309431 - Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation (2012-11-13),
2. 8241998 - Method of producing an SOI structure with an insulating layer of controlled thickness (2012-08-14),
3. 7799651 - Method of treating interface defects in a substrate (2010-09-21),
4. 7772087 - Method of catastrophic transfer of a thin film after co-implantation (2010-08-10),
5. 7695996 - Photodetecting device (2010-04-13),
6. 7645486 - Method of manufacturing a silicon dioxide layer (2010-01-12),
7. 7601611 - Method of fabricating a semiconductor hetero-structure (2009-10-13),
8. 7572714 - Film taking-off method (2009-08-11),
9. 7572331 - Method of manufacturing a wafer (2009-08-11),
10. 7452745 - Photodetecting device (2008-11-18),
11. 7407548 - Method of manufacturing a wafer (2008-08-05),
12. 7387947 - Method for transferring a thin layer including a controlled disturbance of a crystalline structure (2008-06-17),
13. 7176108 - Method of detaching a thin film at moderate temperature after co-implantation (2007-02-13),
14. 7078353 - Indirect bonding with disappearance of bonding layer (2006-07-18),
15. 6838358 - Method of manufacturing a wafer (2005-01-04),

Title: Inventor Ian Cayrefourcq - Revolutionizing Technology in St. Nazaire les Eymes

Introduction: Ian Cayrefourcq is a visionary inventor based in St. Nazaire les Eymes, France, known for his groundbreaking contributions to the field of technology.

Latest Patents: Ian Cayrefourcq holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his commitment to innovation and sustainability.

Career Highlights: With a career spanning over two decades, Ian Cayrefourcq has worked with leading tech companies to develop cutting-edge solutions that have redefined industries. His passion for pushing boundaries and exploring new possibilities has led to the creation of revolutionary technologies.

Collaborations: Ian Cayrefourcq has collaborated with top researchers, engineers, and scientists from around the world to bring his ideas to life. His ability to work in multidisciplinary teams has resulted in successful projects that have had a lasting impact on the tech landscape.

Conclusion: Ian Cayrefourcq's relentless pursuit of innovation and his dedication to creating a better future through technology make him a true pioneer in the field. His work continues to inspire the next generation of inventors and shape the technological advancements of tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…