The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Oct. 28, 2004
Nguyet-phuong Nguyen, Grenoble, FR;
Ian Cayrefourcq, Saint Nazaire les Eymes, FR;
Christelle Lagahe-blanchard, Saint Joseph de Riviere, FR;
Nguyet-Phuong Nguyen, Grenoble, FR;
Ian Cayrefourcq, Saint Nazaire les Eymes, FR;
Christelle Lagahe-Blanchard, Saint Joseph de Riviere, FR;
Commissariat A l'Energie Atomique, Paris, FR;
S.O.I. Tec Silicon On Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a method of catastrophic transfer of a thin film including implanting in a source substrate a first species of ions or gas at a given depth and a second species of ions or gas, the first species being adapted to generate defects and the second species being adapted to occupy those defects. The process further includes applying a stiffener in intimate contact with the source substrate, applying a heat treatment to that source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a buried weakened zone, without initiating the thermal splitting of a thin film, and applying a localized amount of energy, for example mechanical stresses, to that source substrate so as to provoke the catastrophic splitting of a thin film, the thin film having a substantially planar face opposite to the face surface of the source substrate.