The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jan. 10, 2008
Applicant:
Ian Cayrefourcq, St. Nazaire les Eymes, FR;
Inventor:
Ian Cayrefourcq, St. Nazaire les Eymes, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to semiconductor-on-insulator structure and its method of manufacture. This structure includes a substrate, a thin, useful surface layer and an insulating layer positioned between the substrate and surface layer. The insulating layer is at least one dielectric layer of a high k material having a permittivity that is higher than that of silicon dioxide and a capacitance that is substantially equivalent to that of a layer of silicon dioxide having a thickness of less than or equal to 30 nm.