The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Jan. 06, 2004
Nicolas Daval, Grenoble, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Oliver Rayssac, Grenoble, FR;
Ian Cayrefourcq, St. Nazire les Eymes, FR;
Nicolas Daval, Grenoble, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Oliver Rayssac, Grenoble, FR;
Ian Cayrefourcq, St. Nazire les Eymes, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
The invention provides a method of producing a structure of a thin layer of semiconductor material on a support substrate. The thin layer is obtained from a donor substrate and includes an upper layer of semiconductor material. The method includes forming on the upper layer a bonding layer of a material that accepts diffusion from an element of the material of the upper layer, bonding the donor substrate from the side on which the bonding layer is formed on the upper layer to the support substrate, and diffusing the element from the upper layer into the bonding layer to homogenize the concentration of the element in the bonding layer and the upper layer. The result is that the thin layer of the structure is joined by the bonding layer to the upper layer.