The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Nov. 18, 2003
Thibaut Maurice, Grenoble, FR;
Ian Cayrefourcq, St. Nazaire les Eymes, FR;
Franck Fournel, Moirans, FR;
Thibaut Maurice, Grenoble, FR;
Ian Cayrefourcq, St. Nazaire les Eymes, FR;
Franck Fournel, Moirans, FR;
S.O.I.TEC Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.