The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2007

Filed:

Nov. 06, 2003
Applicants:

Ian Cayrefourcq, 38330 Saint Nazaire les Eymes, FR;

Nadia Ben Mohamed, 38140 Renage, FR;

Christelle Lagahe-blanchard, 38134, Saint Joseph de Riviere, FR;

Nguyet-phuong Nguyen, 38100 Grenoble, FR;

Inventors:

Ian Cayrefourcq, 38330 Saint Nazaire les Eymes, FR;

Nadia Ben Mohamed, 38140 Renage, FR;

Christelle Lagahe-Blanchard, 38134, Saint Joseph de Riviere, FR;

Nguyet-Phuong Nguyen, 38100 Grenoble, FR;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.


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