The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Oct. 28, 2004
Nguyet-phuong Nguyen, Grenoble, FR;
Ian Cayrefourcq, Saint Nazaire les Eymes, FR;
Christelle Lagahe-blanchard, Saint Joseph de Rivière, FR;
Konstantin Bourdelle, Crolles, FR;
Aurélie Tauzin, Saint Egreve, FR;
Franck Fournel, Villard-Bonnot, FR;
Nguyet-Phuong Nguyen, Grenoble, FR;
Ian Cayrefourcq, Saint Nazaire les Eymes, FR;
Christelle Lagahe-Blanchard, Saint Joseph de Rivière, FR;
Konstantin Bourdelle, Crolles, FR;
Aurélie Tauzin, Saint Egreve, FR;
Franck Fournel, Villard-Bonnot, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.