Tsukuba, Japan

Katsuhisa Tanaka

USPTO Granted Patents = 13 

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Arakawa, JP (2019)
  • Tsukuba, JP (2020 - 2022)
  • Himeji Hyogo, JP (2022)

Company Filing History:


Years Active: 2019-2025

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13 patents (USPTO):Explore Patents

Title: Innovations of Katsuhisa Tanaka

Introduction

Katsuhisa Tanaka is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents involves a semiconductor device that features a trench in a silicon carbide layer, extending in a first direction. This device includes a gate electrode within the trench and multiple silicon carbide regions arranged in a specific order. The first and third regions possess a first conductive type, while the second and fourth regions have a second conductive type. Another notable patent describes a semiconductor device that consists of various silicon carbide regions of differing conductivity types, along with a metal silicide layer strategically placed to enhance performance.

Career Highlights

Throughout his career, Katsuhisa Tanaka has worked with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Katsuhisa has collaborated with esteemed colleagues, including Ryosuke Iijima and Shinya Kyogoku. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Katsuhisa Tanaka's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

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