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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11201210 B1

PDFFull Text
Date of Patent:
Dec. 14, 2021

Filed:

Feb. 21, 2020

Semiconductor device, inverter circuit, drive device, vehicle, and elevator

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shinya Kyogoku, Tsukuba, JP;

Katsuhisa Tanaka, Tsukuba, JP;

Ryosuke Iijima, Setagaya, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Cuong B Nguyen

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); B66B 11/04 (2006.01); H02P 27/06 (2006.01); B61C 3/00 (2006.01); B60R 16/023 (2006.01); B60K 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 21/0475 (2013.01); H01L 29/0869 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); B60K 1/00 (2013.01); B60R 16/0231 (2013.01); B61C 3/00 (2013.01); B66B 11/043 (2013.01); H02P 27/06 (2013.01);
Abstract

A semiconductor device of an embodiment includes a SiC layer including a first trench, a second trench having first and second regions, an n-type first SiC region, a p-type second SiC region, an n-type third SiC region, a p-type fourth SiC region between the first trench and the first SiC region, and a p-type fifth SiC region between the second trench and the first SiC region and having a first portion and a second portion, a gate electrode in the first trench, a first electrode in the second trench, and a second electrode. A distance between the first trench and the first region is greater than a distance between the first trench and the second region, the first portion is separated from the fourth SiC region, the second portion contacts the fourth SiC region, the first region contacts the first portion, and the second region contacts the second portion.

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