The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Aug. 18, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shunsuke Asaba, Himeji Hyogo, JP;
Katsuhisa Tanaka, Himeji Hyogo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes first, second and control electrodes, and a semiconductor part between the first and second electrode. The semiconductor part includes first and third layers of a first conductive type, and second, fourth and fifth layers of a second conductive type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third layer is partially provided on the second layer between the second layer and the second electrode. A first fourth layer and a second fourth layer are provided in the first layer. The fifth layer is provided between the first layer and the second layer. The fifth layer is partially provided on the first layer between the first fourth layer and the second fourth layer. The control electrode is provided between the second electrode and each of the fourth layers.