The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Feb. 25, 2022
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Shunsuke Asaba, Himeji Hyogo, JP;
Yuji Kusumoto, Tatsuno Hyogo, JP;
Katsuhisa Tanaka, Himeji Hyogo, JP;
Yujiro Hara, Himeji Hyogo, JP;
Makoto Mizukami, Ibo Hyogo, JP;
Masaru Furukawa, Himeji Hyogo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Masanori Nagata, Himeji Hyogo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type on the first region, and a third silicon carbide region of a second conductivity type on the second region. Fourth and fifth silicon carbide region of the first conductivity type are on the third region. A first electrode has a first portion between the fourth region and fifth region in a first direction. A metal silicide layer is between the first portion and the third region, between the first portion and the fourth region in the first direction, and between the first portion and the fifth silicon carbide region in the first direction.