The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Aug. 29, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takuma Suzuki, Himeji Hyogo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Katsuhisa Tanaka, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
According to one embodiment, a silicon carbide semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a plurality of first semiconductor pillar regions of a first conductivity type, a second semiconductor pillar region of a second conductivity type. The first semiconductor pillar regions include a first region has a first impurity concentration and second region has a second impurity concentration higher than the first impurity concentration. The second semiconductor pillar regions include a third region has a third impurity concentration and a fourth region has a fourth impurity concentration higher than the third impurity concentration.