The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jul. 13, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Katsuhisa Tanaka, Himeji Hyogo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
According to one embodiment, a semiconductor device includes first and second electrodes, first to sixth semiconductor regions, a gate electrode, and a conductive part. The first semiconductor region is located on the first electrode. The first semiconductor region includes first and second regions. The second semiconductor region is located on the first region. The gate electrode is located on the second semiconductor region with a gate insulating layer interposed. The third semiconductor region is located on the first region and is separated from the second semiconductor region. The conductive part is located on the third semiconductor region with an insulating layer interposed. The fourth semiconductor region is located on the second region. The fifth semiconductor region is located on a portion of the fourth semiconductor region. The sixth semiconductor region contacts the third semiconductor region. The second electrode is located on the fourth and fifth semiconductor regions.